商品詳細

This book offers a comprehensive exploration of the design and technology of nanoscale semiconductor devices, with a special focus on novel materials and structures that address the limitations of conventional silicon-based technologies. As the miniaturization of devices pushes beyond traditional scaling limits, alternative materials-such as 2D materials, Germanium, III-V compounds, carbon, and graphene-are critical to overcoming challenges like short channel effects, high leakage currents, and power dissipation.

Targeted towards researchers, scientists, and postgraduate students, this book covers cutting-edge device architectures such as FinFETs, GAA-FETs, nanowires, CNTFETs, TFETs, FeFETs, HEMTs, and spin-based devices. It also details the modeling, simulation, and application-driven design for low-power, high-performance VLSI systems.

With clear explanations and in-depth analysis, this volume bridges the gap between traditional MOSFET fabrication and next-generation nanoelectronic design. Readers will gain a solid understanding of material properties, device behavior, and circuit co-design strategies, making it an essential resource for advancing chip design in the sub-micron era.