株式会社極東書店トップ ＞ 商品一覧 ＞ Charged Semiconductor Defects: Structure, Thermodynamics and Diffusion. 2009 ed.
商品詳細
Charged Semiconductor Defects: Structure, Thermodynamics and Diffusion. 2009 ed.
・ISBN 978-1-84882-058-6 hard EUR 149.99
￥40,091.- (税込) ※（※）価格はご注文時の参考価格となります。
納品価格につきましては書籍の入荷時点で確定となります。
版元の原価改定、外国為替の変動等により異なる場合がございますので、予めご了承下さい。
| 著者・編者 | Seebauer, Edmund G. / Kratzer, Meredith C., |
|---|---|
| シリーズ | (Engineering Materials and Processes) |
| 出版社 | (Springer London Ltd, UK) |
| 出版年月 | 2008 |
| ページ数 | 298 pp. |
| 言語 | ENG |
| ニュース番号 | ＜A05-51933＞ |
解説
Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of "defect engineering". For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. "Charged Defects in Semiconductors" details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.