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Nanoscale Memory Repair. 2011 ed.
・ISBN 978-1-4614-2794-0 paper EUR 109.99
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| 著者・編者 | Horiguchi, Masashi / Itoh, Kiyoo, |
|---|---|
| シリーズ | (Integrated Circuits and Systems) |
| 出版社 | (Springer-Verlag New York Inc., US) |
| 出版年月 | 2013 |
| ページ数 | 218 pp. |
| 言語 | ENG |
| ニュース番号 | ＜A05-46126＞ |
解説
Yield and reliability of memories have degraded with device and voltage scaling in the nano-scale era, due to ever-increasing hard/soft errors and device parameter variations. This book systematically describes these yield and reliability issues in terms of mathematics and engineering, as well as an array of repair techniques, based on the authors' long careers in developing memories and low-voltage CMOS circuits. Nanoscale Memory Repair gives a detailed explanation of the various yield models and calculations, as well as various, practical logic and circuits that are critical for higher yield and reliability.