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商品詳細
Semiconductor Power Devices: Volume 1: Physics, Technology and Design of Power Devices. Third Edition 2026
・ISBN 978-3-032-15695-2 hard EUR 279.99
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| 著者・編者 | Lutz, Josef / Schlangenotto, Heinrich / Scheuermann, Uwe / DeDoncker, Rik, |
|---|---|
| 出版社 | (Springer Nature Switzerland AG, SZ) |
| 出版年月 | 2026 |
| ページ数 | 565 pp. |
| 言語 | ENG |
| ニュース番号 | ＜A05-12207＞ |
解説
This new edition of the book Semiconductor Power Devices is now divided into two volumes. This first volume focuses on the Physics, Technology, and Design of Power Devices. It provides a comprehensive explanation of the physical principles essential for understanding modern power devices. The complementation of the classical pn-theory regarding high-injection behavior and the description of emitters by H. Schlangenotto is now rounded off, displayed in newly written Sections. For IGBTs, new structures with strong carrier confinement are added. New are special chapters on SiC devices and GaN devices. In the SiC chapter, the bipolar mode of the MOSFET body diode and its reverse recovery is discussed for the first time.
The edition provides extended content offering significant updates compared to previous editions.