株式会社極東書店トップ ＞ 商品一覧 ＞ Multi-run Memory Tests for Pattern Sensitive Faults. 1st ed. 2019
商品詳細
Multi-run Memory Tests for Pattern Sensitive Faults. 1st ed. 2019
・ISBN 978-3-319-91203-5 hard EUR 49.99
￥13,361.- (税込) ※（※）価格はご注文時の参考価格となります。
納品価格につきましては書籍の入荷時点で確定となります。
版元の原価改定、外国為替の変動等により異なる場合がございますので、予めご了承下さい。
| 著者・編者 | Mrozek, Ireneusz, |
|---|---|
| 出版社 | (Springer International Publishing AG, SZ) |
| 出版年月 | 2018 |
| ページ数 | 135 pp. |
| 言語 | ENG |
| ニュース番号 | ＜A04-63715＞ |
解説
This book describes efficient techniques for production testing as well as for periodic maintenance testing (specifically in terms of multi-cell faults) in modern semiconductor memory. The author discusses background selection and address reordering algorithms in multi-run transparent march testing processes. Formal methods for multi-run test generation and many solutions to increase their efficiency are described in detail. All methods presented ideas are verified by both analytical investigations and numerical simulations.
- Provides the first book related exclusively to the problem of multi-cell fault detection by multi-run tests in memory testing process;
- Presents practical algorithms for design and implementation of efficient multi-run tests;
- Demonstrates methods verified by analytical and experimental investigations.