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Field-Effect Transistors Technology: From Sustainability to Next-Generation VLSI Design.
・ISBN 978-1-032-87607-8 hard GB£ 187.99
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| 著者・編者 | Raman, Ashish / Singh, Prabhat / Kumar, Naveen / Singh, Sarabdeep (eds.), |
|---|---|
| 出版社 | (CRC Press, UK) |
| 出版年月 | 2025 |
| ページ数 | 466 pp. |
| 言語 | ENG |
| ニュース番号 | ＜A04-61512＞ |
解説
The text provides a comprehensive exploration of the transitions occurring in the field-effect transistor technology, covering the historical evolution, current advancements, and future trends.
Features
- Highlights the significance of field-effect transistors in VLSI and post-complementary metal-oxide-semiconductor design strategies.
- Discusses design challenges, different modeling aspects of field-effect transistors, and emerging materials in semiconductor design.
- Showcases the importance of simulation in forecasting device behavior, enhancing performance, and investigating novel device designs.
- Covers topics such as quantum computing, device simulation process on technology computer-aided design, carbon nanotubes, and organic field-effect transistors.
The text is primarily written for senior undergraduates, graduate students, and academic researchers in the fields of electrical engineering, electrical and communications engineering, materials science, nanoscience, and nanotechnology.