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Power Semiconductor Technology in Pulsed Power Applications.
・ISBN 978-3-031-80251-5 hard EUR 129.99
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| 著者・編者 | Bayne, Stephen B. / Pushpakaran, Bejoy N. (eds.), |
|---|---|
| 出版社 | (Springer International Publishing AG, SZ) |
| 出版年月 | 2025 |
| ページ数 | 174 pp. |
| 言語 | ENG |
| ニュース番号 | <A03-89130> |
解説
This book provides students and professionals, including pulsed power designers, with a complete overview of advanced semiconductor devices that can improve the performance of pulsed power systems. The development and advancement of pulsed power technology was driven by research into nuclear fusion and military applications. As technology advances, pulsed power systems are finding their way into industrial and commercial applications. The book begins with a detailed discussion of various applications of pulsed power technology with a primary focus on nuclear fusion. Historically, traditional pulsed-power switches (spark gaps, thyratrons, ignitrons, etc.) have been used in such pulsed power systems. A comparative analysis of the cost and performance specifications of wide bandgap solid-state devices and traditional switches and a review of various pulsed-power architectures is provided. The superior properties of advanced wide bandgap material have enabled the development of high-power, high-temperature, and fast-switching semiconductor devices. Based on the successful integration of wide bandgap technology in high-power traction and renewable energy applications, wide bandgap solid-state switches have the potential to have a profound impact on pulsed-power systems; however, this modern technology introduces added complexity with respect to design, fabrication, and packaging of the semiconductor. The concluding chapters of this book will provide readers with an in-depth look into the key aspects and challenges associated with wide bandgap device fabrication and packaging.