株式会社極東書店トップ ＞ 商品一覧 ＞ Handbook of Silicon Carbide Materials and Devices.
商品詳細
Handbook of Silicon Carbide Materials and Devices.
・ISBN 978-1-032-38357-6 paper GB£ 50.99
￥16,153.- (税込) ※（※）価格はご注文時の参考価格となります。
納品価格につきましては書籍の入荷時点で確定となります。
版元の原価改定、外国為替の変動等により異なる場合がございますので、予めご了承下さい。
| 著者・編者 | Feng, Zhe Chuan (ed.), |
|---|---|
| シリーズ | (Series in Materials Science and Engineering) |
| 出版社 | (CRC Press, UK) |
| 出版年月 | 2024 |
| ページ数 | 444 pp. |
| 言語 | ENG |
| ニュース番号 | ＜A03-78528＞ |
解説
This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field.
The book consists of 15 chapters, beginning with a chapter by Professor W. J. Choyke, the leading authority in the field, and is divided into four sections. The topics include presolar SiC history, vapor-liquid-solid growth, spectroscopic investigations of 3C-SiC/Si, developments and challenges in the 21st century; CVD principles and techniques, homoepitaxy of 4H-SiC, cubic SiC grown on 4H-SiC, SiC thermal oxidation processes and MOS interface, Raman scattering, NIR luminescent studies, Mueller matrix ellipsometry, Raman microscopy and imaging, 4H-SiC UV photodiodes, radiation detectors, and short wavelength and synchrotron X-ray diffraction.
This comprehensive work provides a strong contribution to the engineering, materials, and basic science knowledge of the 21st century, and will be of interest to material growers, designers, engineers, scientists, postgraduate students, and entrepreneurs.