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Si Detectors and Characterization for HEP and Photon Science Experiment: How to Design Detectors by TCAD Simulation. 2019 ed.
・ISBN 978-3-030-19533-5 paper EUR 89.99
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| 著者・編者 | Srivastava, Ajay Kumar, |
|---|---|
| 出版社 | (Springer Nature Switzerland AG, SZ) |
| 出版年月 | 2020 |
| ページ数 | 183 pp. |
| 言語 | ENG |
| ニュース番号 | <A03-39638> |
解説
This book reviews the HL-LHC experiments and the fourth-generation photon science experiments, discussing the latest radiation hardening techniques, optimization of device & process parameters using TCAD simulation tools, and the experimental characterization required to develop rad-hard Si detectors for x-ray induced surface damage and bulk damage by hadronic irradiation.
Consisting of eleven chapters, it introduces various types of strip and pixel detector designs for the current upgrade, radiation, and dynamic range requirement of the experiments, and presents an overview of radiation detectors, especially Si detectors. It also describes the design of pixel detectors, experiments and characterization of Si detectors.