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Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion. 1st ed. 2018
・ISBN 978-3-319-77993-5 hard EUR 139.99
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| 著者・編者 | Meneghesso, Gaudenzio / Meneghini, Matteo / Zanoni, Enrico (eds.), |
|---|---|
| シリーズ | (Integrated Circuits and Systems) |
| 出版社 | (Springer International Publishing AG, SZ) |
| 出版年月 | 2018 |
| ページ数 | 232 pp. |
| 言語 | ENG |
| ニュース番号 | ＜A02-75325＞ |
解説
This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion.
- Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers;
- Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency andlower cost power conversion;
- Enables design of smaller, cheaper and more efficient power supplies.