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Nanoscale Semiconductors: Materials, Devices and Circuits.
・ISBN 978-1-032-30754-1 hard GB£ 171.99
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| 著者・編者 | Raj, Balwinder / Raman, Ashish (eds.), |
|---|---|
| 出版社 | (CRC Press, UK) |
| 出版年月 | 2022 |
| ページ数 | 240 pp. |
| 言語 | ENG |
| ニュース番号 | ＜A01-61294＞ |
解説
This reference text discusses conduction mechanism, structure construction, operation, performance evaluation and applications of nanoscale semiconductor materials and devices in VLSI circuits design.
The text explains nano materials, devices, analysis of its design parameters to meet the sub-nano-regime challenges for CMOS devices. It discusses important topics including memory design and testing, fin field-effect transistor (FinFET), tunnel field-effect transistor (TFET) for sensors design, carbon nanotube field-effect transistor (CNTFET) for memory design, nanowire and nanoribbons, nano devices based low-power-circuit design, and microelectromechanical systems (MEMS) design.
The book
- discusses nanoscale semiconductor materials, device models, and circuit design
- covers nanoscale semiconductor device structures and modeling
- discusses novel nano-semiconductor devices such as FinFET, CNTFET, and Nanowire
- covers power dissipation and reduction techniques
Discussing innovative nanoscale semiconductor device structures and modeling, this text will be useful for graduate students, and academic researchers in diverse areas such as electrical engineering, electronics and communication engineering, nanoscience, and nanotechnology. It covers nano devices based low-power-circuit design, nanoscale devices based digital VLSI circuits, and novel devices based analog VLSI circuits design.