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High-k Materials in Multi-Gate FET Devices.
・ISBN 978-0-367-63969-3 paper GB£ 79.99
￥25,340.- (税込) ※（※）価格はご注文時の参考価格となります。
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| 著者・編者 | Tayal, Shubham / Singla, Parveen / Davim, J. Paulo (eds.), |
|---|---|
| シリーズ | (Science, Technology, and Management) |
| 出版社 | (CRC Press, UK) |
| 出版年月 | 2023 |
| ページ数 | 164 pp. |
| 言語 | ENG |
| ニュース番号 | ＜A01-9458＞ |
解説
High-k Materials in Multi-Gate FET Devices focuses on high-k materials for advanced FET devices. It discusses emerging challenges in the engineering and applications and considers issues with associated technologies. It covers the various way of utilizing high-k dielectrics in multi-gate FETs for enhancing their performance at the device as well as circuit level.
- Provides basic knowledge about FET devices
- Presents the motivation behind multi-gate FETs, including current and future trends in transistor technologies
- Discusses fabrication and characterization of high-k materials
- Contains a comprehensive analysis of the impact of high-k dielectrics utilized in the gate-oxide and the gate-sidewall spacers on the GIDL of emerging multi-gate FET architectures
- Offers detailed application of high-k materials for advanced FET devices
- Considers future research directions
This book is of value to researchers in materials science, electronics engineering, semiconductor device modeling, IT, and related disciplines studying nanodevices such as FinFET and Tunnel FET and device-circuit codesign issues.