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商品詳細
Handbook for III-V High Electron Mobility Transistor Technologies.
・ISBN 978-0-367-72924-0 paper GB£ 58.99
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| 著者・編者 | Nirmal, D. / Ajayan, J. (eds.), |
|---|---|
| 出版社 | (CRC Press, UK) |
| 出版年月 | 2020 |
| ページ数 | 444 pp. |
| 言語 | ENG |
| ニュース番号 | ＜A00-45103＞ |
解説
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT).
Key Features
- Combines III-As/P/N HEMTs with reliability and current status in single volume
- Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis
- Covers all theoretical and experimental aspects of HEMTs
- Discusses AlGaN/GaN transistors
- Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots