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Introduction to RF Power Amplifier Design and Simulation.
・ISBN 978-0-367-73800-6 paper GB£ 63.99
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| 著者・編者 | Eroglu, Abdullah, |
|---|---|
| 出版社 | (CRC Press, UK) |
| 出版年月 | 2020 |
| ページ数 | 449 pp. |
| 言語 | ENG |
| ニュース番号 | <A00-45008> |
解説
Introduction to RF Power Amplifier Design and Simulation fills a gap in the existing literature by providing step-by-step guidance for the design of radio frequency (RF) power amplifiers, from analytical formulation to simulation, implementation, and measurement. Featuring numerous illustrations and examples of real-world engineering applications, this book:
- Gives an overview of intermodulation and elaborates on the difference between linear and nonlinear amplifiers
- Describes the high-frequency model and transient characteristics of metal-oxide-semiconductor field-effect transistors
- Details active device modeling techniques for transistors and parasitic extraction methods for active devices
- Explores network and scattering parameters, resonators, matching networks, and tools such as the Smith chart
- Covers power-sensing devices including four-port directional couplers and new types of reflectometers
- Presents RF filter designs for power amplifiers as well as application examples of special filter types
- Demonstrates the use of computer-aided design (CAD) tools, implementing systematic design techniques
Blending theory with practice, Introduction to RF Power Amplifier Design and Simulation supplies engineers, researchers, and RF/microwave engineering students with a valuable resource for the creation of efficient, better-performing, low-profile, high-power RF amplifiers.