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Dopants and Defects in Semiconductors. 2nd edition
・ISBN 978-0-367-78143-9 paper GB£ 53.99
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| 著者・編者 | McCluskey, Matthew D. / Haller, Eugene E., |
|---|---|
| 出版社 | (CRC Press, UK) |
| 出版年月 | 2021 |
| ページ数 | 372 pp. |
| 言語 | ENG |
| ニュース番号 | ＜A00-38551＞ |
解説
Praise for the First Edition
"The book goes beyond the usual textbook in that it provides more specific examples of real-world defect physics ... an easy reading, broad introductory overview of the field"
-Materials Today
"... well written, with clear, lucid explanations ..."
-Chemistry World
This revised edition provides the most complete, up-to-date coverage of the fundamental knowledge of semiconductors, including a new chapter that expands on the latest technology and applications of semiconductors. In addition to inclusion of additional chapter problems and worked examples, it provides more detail on solid-state lighting (LEDs and laser diodes). The authors have achieved a unified overview of dopants and defects, offering a solid foundation for experimental methods and the theory of defects in semiconductors.
Matthew D. McCluskey is a professor in the Department of Physics and Astronomy and Materials Science Program at Washington State University (WSU), Pullman, Washington. He received a Physics Ph.D. from the University of California (UC), Berkeley.
Eugene E. Haller is a professor emeritus at the University of California, Berkeley, and a member of the National Academy of Engineering. He received a Ph.D. in Solid State and Applied Physics from the University of Basel, Switzerland.