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Fundamentals of Modern VLSI Devices. 3rd Revised edition
・ISBN 978-1-108-48002-4 hard GB£ 54.00
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| 著者・編者 | Taur, Yuan / Ning, Tak H., |
|---|---|
| 出版社 | (Cambridge University Press, UK) |
| 出版年月 | 2021 |
| ページ数 | 622 pp. |
| 言語 | ENG |
| ニュース番号 | ＜A00-12147＞ |
解説
A thoroughly updated third edition of an classic and widely adopted text, perfect for practical transistor design and in the classroom. Covering a variety of recent developments, the internationally renowned authors discuss in detail the basic properties and designs of modern VLSI devices, as well as factors affecting performance. Containing around 25% new material, coverage has been expanded to include high-k gate dielectrics, metal gate technology, strained silicon mobility, non-GCA (Gradual Channel Approximation) modelling of MOSFETs, short-channel FinFETS, and symmetric lateral bipolar transistors on SOI. Chapters have been reorganized to integrate the appendices into the main text to enable a smoother learning experience, and numerous additional end-of-chapter homework exercises (+30%) are included to engage students with real-world problems and test their understanding. A perfect text for senior undergraduate and graduate students taking advanced semiconductor devices courses, and for practicing silicon device professionals in the semiconductor industry.