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商品詳細
Materials and Physics for Nonvolatile Memories: Volume 1160.
・ISBN 978-1-107-40829-6 paper GB£ 27.00
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| 著者・編者 | Fujisaki, Yoshihisa / Waser, Rainer / Li, Tingkai / Bonafos, Caroline (eds.), |
|---|---|
| シリーズ | (MRS Proceedings) |
| 出版社 | (Cambridge University Press, UK) |
| 出版年月 | 2014 |
| ページ数 | 216 pp. |
| 言語 | ENG |
| ニュース番号 | ＜A00-5544＞ |
解説
This third book in a series on nonvolatile memories builds on fundamental materials properties, materials integration, demonstration, and industrial devices gathered in those previous. A strong and increasing interest in nonvolatile memories, both domestic and international, indicates the worldwide importance of these materials and memory devices. The book features research on advanced flash memories, including nanoparticle floating gate FETs, MRAM, FeRAM, ReRAM and phase change RAMs, as well as memories using polymer materials. Papers from a joint session with Symposium FF, Novel Materials and Devices for Spintronics, are also included.