株式会社極東書店トップ商品一覧Nonlinear Transistor Model Parameter Extraction Techniques.

商品詳細

Nonlinear Transistor Model Parameter Extraction Techniques.

Nonlinear Transistor Model Parameter Extraction Techniques.

・ISBN 978-0-521-76210-6 hard GB£ 123.00

¥38,966.- (税込) (※)価格はご注文時の参考価格となります。
納品価格につきましては書籍の入荷時点で確定となります。
版元の原価改定、外国為替の変動等により異なる場合がございますので、予めご了承下さい。

お気に入り
電子版あり 大学・学術機関向け電子ブック(eBook)ISBN 9781139014960
著者・編者Rudolph, Matthias / Fager, Christian / Root, David E. (eds.),
シリーズ (The Cambridge RF and Microwave Engineering Series)
出版社 (Cambridge University Press, UK)
出版年月2011
ページ数366 pp.
言語ENG
ニュース番号<A00-3831>

解説

Achieve accurate and reliable parameter extraction using this complete survey of state-of-the-art techniques and methods. A team of experts from industry and academia provides you with insights into a range of key topics, including parasitics, intrinsic extraction, statistics, extraction uncertainty, nonlinear and DC parameters, self-heating and traps, noise, and package effects. Learn how similar approaches to parameter extraction can be applied to different technologies. A variety of real-world industrial examples and measurement results show you how the theories and methods presented can be used in practice. Whether you use transistor models for evaluation of device processing and you need to understand the methods behind the models you use, or you want to develop models for existing and new device types, this is your complete guide to parameter extraction.